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Taiwan Semiconductor TSM150NB04LCR RLG
MOSFET N-CH 40V 10A/41A 8PDFN
Manufacturer # :TSM150NB04LCR RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM150NB04LCR RLG-DS
Datasheet :
TSM150NB04LCR RLG Datasheet
TSM150NB04LCR RLG DatasheetCustomer # :
Description : MOSFET N-CH 40V 10A/41A 8PDFN
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| Quantity | Unit Price | Total |
| 1+ | $ 0.0196 | $ 0.02 |
| 10+ | $ 0.0194 | $ 0.19 |
| 25+ | $ 0.0190 | $ 0.48 |
| 100+ | $ 0.0187 | $ 1.87 |
| 250+ | $ 0.0185 | $ 4.63 |
In Stock: 4794
MOQ :1 PCS
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Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0196
Total :$ 0.02
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TSM150NB04LCR RLG information
Taiwan Semiconductor TSM150NB04LCR RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-PDFN (5x6)
- Power Dissipation ( Max):3.1W (Ta), 56W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:10A (Ta), 41A (Tc)
- Rds On ( Max) @ Id, Vgs:15mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:18 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:966 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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