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Taiwan Semiconductor TSM150NB04DCR RLG
DUAL N-CHANNEL POWER MOSFET 40V,
Manufacturer # :TSM150NB04DCR RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM150NB04DCR RLG-DS
Datasheet :
TSM150NB04DCR RLG Datasheet
TSM150NB04DCR RLG DatasheetCustomer # :
Description : DUAL N-CHANNEL POWER MOSFET 40V,
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.9360 | $ 0.94 |
| 10+ | $ 0.7668 | $ 7.67 |
| 100+ | $ 0.5967 | $ 59.67 |
| 500+ | $ 0.5121 | $ 256.05 |
| 1000+ | $ 0.4176 | $ 417.6 |
In Stock: 14940
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.936
Total :$ 0.94
Delivery :
Payment :
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TSM150NB04DCR RLG information
Taiwan Semiconductor TSM150NB04DCR RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Power - Max:2W (Ta), 40W (Tc)
- Supplier Device Package:8-PDFN (5x6)
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):40V
- Current - Continuous Drain ( Id) @ 25° C:8A (Ta), 38A (Tc)
- Rds On ( Max) @ Id, Vgs:15mOhm @ 8A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:18nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:1132pF @ 20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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