.JPG)
Images are for reference only.
1 : $3.8800
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Taiwan Semiconductor TSM130NB06LCR
MOSFET N-CH 60V 10A/51A 8PDFN
Manufacturer # :TSM130NB06LCR
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM130NB06LCR-DS
Datasheet :
TSM130NB06LCR Datasheet
TSM130NB06LCR DatasheetCustomer # :
Description : MOSFET N-CH 60V 10A/51A 8PDFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.8800 | $ 3.88 |
In Stock: 1040
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.88
Total :$ 3.88
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
TSM130NB06LCR information
Taiwan Semiconductor TSM130NB06LCR technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-PDFN (5x6)
- Power Dissipation ( Max):3.1W (Ta), 83W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:10A (Ta), 51A (Tc)
- Rds On ( Max) @ Id, Vgs:13mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:37 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2175 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
Related Products Recommended
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.
