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Taiwan Semiconductor TSM120N10PQ56 RLG
MOSFET N-CH 100V 58A 8PDFN
Manufacturer # :TSM120N10PQ56 RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM120N10PQ56 RLG-DS
Datasheet :
TSM120N10PQ56 RLG Datasheet
TSM120N10PQ56 RLG DatasheetCustomer # :
Description : MOSFET N-CH 100V 58A 8PDFN
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| Quantity | Unit Price | Total |
| 1+ | $ 3.0600 | $ 3.06 |
In Stock: 2992
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.06
Total :$ 3.06
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TSM120N10PQ56 RLG information
Taiwan Semiconductor TSM120N10PQ56 RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-PDFN (5x6)
- Power Dissipation ( Max):36W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:58A (Tc)
- Rds On ( Max) @ Id, Vgs:12mOhm @ 30A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:145 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3902 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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