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Taiwan Semiconductor TSM120N06LCS RLG
MOSFET N-CHANNEL 60V 23A 8SOP
Manufacturer # :TSM120N06LCS RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM120N06LCS RLG-DS
Datasheet :
TSM120N06LCS RLG Datasheet
TSM120N06LCS RLG DatasheetCustomer # :
Description : MOSFET N-CHANNEL 60V 23A 8SOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.6066 | $ 6.07 |
| 2500+ | $ 0.3370 | $ 842.5 |
| 5000+ | $ 0.3209 | $ 1604.5 |
| 12500+ | $ 0.3061 | $ 3826.25 |
| 25000+ | $ 0.3056 | $ 7640 |
In Stock: 15000
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.6066
Total :$ 0.61
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TSM120N06LCS RLG information
Taiwan Semiconductor TSM120N06LCS RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOP
- Power Dissipation ( Max):12.5W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:23A (Tc)
- Rds On ( Max) @ Id, Vgs:12mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:37 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2193 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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