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Taiwan Semiconductor TSM10N80CI C0G
MOSFET N-CH 800V 9.5A ITO220AB
Manufacturer # :TSM10N80CI C0G
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM10N80CI C0G-DS
Datasheet :
TSM10N80CI C0G Datasheet
TSM10N80CI C0G DatasheetCustomer # :
Description : MOSFET N-CH 800V 9.5A ITO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 11.2000 | $ 11.2 |
| 5+ | $ 10.0800 | $ 50.4 |
| 25+ | $ 8.9200 | $ 223 |
| 100+ | $ 8.0000 | $ 800 |
In Stock: 933
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 11.2
Total :$ 11.20
Delivery :
Payment :
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TSM10N80CI C0G information
Taiwan Semiconductor TSM10N80CI C0G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack, Isolated Tab
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:ITO-220AB
- Power Dissipation ( Max):48W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):800 V
- Current - Continuous Drain ( Id) @ 25° C:9.5A (Tc)
- Rds On ( Max) @ Id, Vgs:1.05Ohm @ 4.75A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:53 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2336 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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