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Taiwan Semiconductor TSM036N03PQ56 RLG
MOSFET N-CH 30V 124A 8PDFN
Manufacturer # :TSM036N03PQ56 RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM036N03PQ56 RLG-DS
Datasheet :
TSM036N03PQ56 RLG Datasheet
TSM036N03PQ56 RLG DatasheetCustomer # :
Description : MOSFET N-CH 30V 124A 8PDFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.7470 | $ 0.75 |
| 10+ | $ 0.6201 | $ 6.2 |
| 100+ | $ 0.4824 | $ 48.24 |
| 500+ | $ 0.4086 | $ 204.3 |
| 1000+ | $ 0.3330 | $ 333 |
In Stock: 7059
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.747
Total :$ 0.75
Delivery :
Payment :
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TSM036N03PQ56 RLG information
Taiwan Semiconductor TSM036N03PQ56 RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-PDFN (5x6)
- Power Dissipation ( Max):83W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:124A (Tc)
- Rds On ( Max) @ Id, Vgs:3.6mOhm @ 22A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:50 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2530 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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