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Taiwan Semiconductor TSM035NB04CZ
MOSFET N-CH 40V 18A/157A TO220
Manufacturer # :TSM035NB04CZ
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM035NB04CZ-DS
Datasheet :
TSM035NB04CZ Datasheet
TSM035NB04CZ DatasheetCustomer # :
Description : MOSFET N-CH 40V 18A/157A TO220
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.9890 | $ 1.99 |
| 50+ | $ 1.0636 | $ 53.18 |
| 100+ | $ 1.9890 | $ 198.9 |
| 500+ | $ 0.7958 | $ 397.9 |
| 1000+ | $ 0.7398 | $ 739.8 |
In Stock: 10851
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.989
Total :$ 1.99
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TSM035NB04CZ information
Taiwan Semiconductor TSM035NB04CZ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220
- Power Dissipation ( Max):2W (Ta), 156W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:18A (Ta), 157A (Tc)
- Rds On ( Max) @ Id, Vgs:3.5mOhm @ 18A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:110 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:6990 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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