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Taiwan Semiconductor TSM026NA03CR RLG
MOSFET N-CH 30V 168A 8PDFN
Manufacturer # :TSM026NA03CR RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM026NA03CR RLG-DS
Datasheet :
TSM026NA03CR RLG Datasheet
TSM026NA03CR RLG DatasheetCustomer # :
Description : MOSFET N-CH 30V 168A 8PDFN
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| Quantity | Unit Price | Total |
| 1+ | $ 2.2200 | $ 2.22 |
In Stock: 2469
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.22
Total :$ 2.22
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TSM026NA03CR RLG information
Taiwan Semiconductor TSM026NA03CR RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-PDFN (5x6)
- Power Dissipation ( Max):125W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:168A (Tc)
- Rds On ( Max) @ Id, Vgs:2.6mOhm @ 24A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:41 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2540 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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