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Taiwan Semiconductor TSM018NB03CR RLG
MOSFET N-CH 30V 29A/194A 8PDFN
Manufacturer # :TSM018NB03CR RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM018NB03CR RLG-DS
Datasheet :
TSM018NB03CR RLG Datasheet
TSM018NB03CR RLG DatasheetCustomer # :
Description : MOSFET N-CH 30V 29A/194A 8PDFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.1907 | $ 11.91 |
| 2500+ | $ 0.6615 | $ 1653.75 |
| 5000+ | $ 0.6367 | $ 3183.5 |
| 12500+ | $ 0.6156 | $ 7695 |
In Stock: 10458
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1907
Total :$ 1.19
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TSM018NB03CR RLG information
Taiwan Semiconductor TSM018NB03CR RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-PDFN (5x6)
- Power Dissipation ( Max):3.1W (Ta), 136W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:29A (Ta), 194A (Tc)
- Rds On ( Max) @ Id, Vgs:1.8mOhm @ 29A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:120 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:7252 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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