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Taiwan Semiconductor TQM250NB06DCR RLG
60V, 30A, DUAL N-CHANNEL POWER M
Manufacturer # :TQM250NB06DCR RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TQM250NB06DCR RLG-DS
Datasheet :
TQM250NB06DCR RLG Datasheet
TQM250NB06DCR RLG DatasheetCustomer # :
Description : 60V, 30A, DUAL N-CHANNEL POWER M
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.8730 | $ 0.87 |
| 10+ | $ 0.7110 | $ 7.11 |
| 100+ | $ 0.5526 | $ 55.26 |
| 500+ | $ 0.4689 | $ 234.45 |
| 1000+ | $ 0.4635 | $ 463.5 |
In Stock: 15000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.873
Total :$ 0.87
Delivery :
Payment :
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TQM250NB06DCR RLG information
Taiwan Semiconductor TQM250NB06DCR RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount, Wettable Flank
- Package / Case:8-PowerTDFN
- Power - Max:2.5W (Ta), 58W (Tc)
- Supplier Device Package:8-PDFNU (5x6)
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):60V
- Current - Continuous Drain ( Id) @ 25° C:6A (Ta), 30A (Tc)
- Rds On ( Max) @ Id, Vgs:25mOhm @ 6A, 10V
- Vgs(th) ( Max) @ Id:3.8V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:24nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:1398pF @ 30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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