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Taiwan Semiconductor TQM130NB06CR RLG
MOSFET N-CH 60V 10A/50A 8PDFNU
Manufacturer # :TQM130NB06CR RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TQM130NB06CR RLG-DS
Datasheet :
TQM130NB06CR RLG Datasheet
TQM130NB06CR RLG DatasheetCustomer # :
Description : MOSFET N-CH 60V 10A/50A 8PDFNU
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| Quantity | Unit Price | Total |
| 1+ | $ 1.1340 | $ 1.13 |
| 10+ | $ 0.9270 | $ 9.27 |
| 100+ | $ 0.7200 | $ 72 |
| 500+ | $ 0.6102 | $ 305.1 |
| 1000+ | $ 0.5112 | $ 511.2 |
In Stock: 13485
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.134
Total :$ 1.13
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TQM130NB06CR RLG information
Taiwan Semiconductor TQM130NB06CR RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount, Wettable Flank
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-PDFNU (5x6)
- Power Dissipation ( Max):3.1W (Ta), 83W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:10A (Ta), 50A (Tc)
- Rds On ( Max) @ Id, Vgs:13mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:3.8V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:40 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2234 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):7V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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