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Taiwan Semiconductor TQM110NB04DCR RLG
40V, 50A, DUAL N-CHANNEL POWER M
Manufacturer # :TQM110NB04DCR RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TQM110NB04DCR RLG-DS
Datasheet :
TQM110NB04DCR RLG Datasheet
TQM110NB04DCR RLG DatasheetCustomer # :
Description : 40V, 50A, DUAL N-CHANNEL POWER M
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.4580 | $ 1.46 |
| 10+ | $ 1.2150 | $ 12.15 |
| 100+ | $ 0.9630 | $ 96.3 |
| 250+ | $ 0.8964 | $ 224.1 |
| 500+ | $ 0.8136 | $ 406.8 |
In Stock: 7219
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.458
Total :$ 1.46
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Payment :
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TQM110NB04DCR RLG information
Taiwan Semiconductor TQM110NB04DCR RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount, Wettable Flank
- Package / Case:8-PowerTDFN
- Power - Max:2.5W (Ta), 58W (Tc)
- Supplier Device Package:8-PDFNU (5x6)
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):40V
- Current - Continuous Drain ( Id) @ 25° C:10A (Ta), 50A (Tc)
- Rds On ( Max) @ Id, Vgs:11mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:3.8V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:26nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:1354pF @ 20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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