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Taiwan Semiconductor HERAF1006G
DIODE GEN PURP 10A 600V IT0-220A
Manufacturer # :HERAF1006G
Manufacturer :Taiwan Semiconductor
Dasenic # :HERAF1006G-DS
Datasheet :
HERAF1006G Datasheet
HERAF1006G DatasheetCustomer # :
Description : DIODE GEN PURP 10A 600V IT0-220A
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.9090 | $ 0.91 |
| 50+ | $ 0.7319 | $ 36.6 |
| 100+ | $ 0.5800 | $ 58 |
| 500+ | $ 0.4916 | $ 245.8 |
| 1000+ | $ 0.4004 | $ 400.4 |
In Stock: 6000
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.909
Total :$ 0.91
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HERAF1006G information
Taiwan Semiconductor HERAF1006G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Through Hole
- Package / Case:TO-220-2 Full Pack
- Supplier Device Package:ITO-220AC
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):10A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 10 A
- Current - Reverse Leakage @ Vr:10 µA @ 600 V
- Capacitance @ Vr, F:60pF @ 4V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):600 V
- Reverse Recovery Time (trr):80 ns
- Operating Temperature - Junction:-55°C ~ 150°C
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.10.0080
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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