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Taiwan Semiconductor 1N5408G A0G
DIODE GEN PURP 1KV 3A DO201AD
Manufacturer # :1N5408G A0G
Manufacturer :Taiwan Semiconductor
Dasenic # :1N5408G A0G-DS
Datasheet :
1N5408G A0G Datasheet
1N5408G A0G DatasheetCustomer # :
Description : DIODE GEN PURP 1KV 3A DO201AD
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.7400 | $ 0.74 |
| 10+ | $ 0.5840 | $ 5.84 |
| 100+ | $ 0.3640 | $ 36.4 |
| 500+ | $ 0.3080 | $ 154 |
| 1000+ | $ 0.2380 | $ 238 |
In Stock: 2649
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.74
Total :$ 0.74
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1N5408G A0G information
Taiwan Semiconductor 1N5408G A0G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Through Hole
- Package / Case:DO-201AD, Axial
- Supplier Device Package:DO-201AD
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):3A
- Voltage - Forward ( Vf) ( Max) @ If:1 V @ 3 A
- Current - Reverse Leakage @ Vr:5 µA @ 1000 V
- Capacitance @ Vr, F:25pF @ 4V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):1000 V
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-55°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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