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STMicroelectronics STGWA75H65DFB2
357W 115A 650V Trench Field Stop TO-247 IGBTs
Manufacturer # :STGWA75H65DFB2
Manufacturer :STMicroelectronics
Dasenic # :1D00ED-DS
Datasheet :
STGWA75H65DFB2 Datasheet
STGWA75H65DFB2 DatasheetSample :
Customer # :
Description : 357W 115A 650V Trench Field Stop TO-247 IGBTs TO-247
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.889200 | $ 3.89 |
| 10+ | $ 3.387400 | $ 33.87 |
| 25+ | $ 2.846300 | $ 71.16 |
| 60+ | $ 2.834500 | $ 170.07 |
| 120+ | $ 2.393100 | $ 287.17 |
In Stock: 3330
MOQ :1 PCS
Packaging :TO-247
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 3.8892
Total :$ 3.89
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Input Type:Standard
- Power - Max:357 W
- Supplier Device Package:TO-247 Long Leads
- Reverse Recovery Time (trr):88 ns
- Current - Collector ( Ic) ( Max):115 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2V @ 15V, 75A
- Current - Collector Pulsed ( Icm):225 A
- Switching Energy:1.428mJ (on), 1.05mJ (off)
- Gate Charge:207 nC
- Td (on/off) @ 25° C:28ns/100ns
- Test Condition:400V, 75A, 2.2Ohm, 15V
