Images are for reference only.

Share

1 : $3.1320

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Certifications for ISO9001
Certifications for ISO13485
Certifications for ISO45001
Certifications for ISO14001

GeneSiC Semiconductor 1N1202A

DIODE GEN PURP 200V 12A DO4
part number has RoHS
Manufacturer # :1N1202A
Manufacturer :GeneSiC Semiconductor
Dasenic # :1N1202A-DS
Customer # :
Description : DIODE GEN PURP 200V 12A DO4
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 3.1320$ 3.13
20+$ 2.9970$ 59.94
50+$ 2.9250$ 146.25
125+$ 2.8530$ 356.63
300+$ 2.7000$ 810
In Stock: 1777
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.132
Total :$ 3.13
Delivery :
dhlupsfedex
Payment :
paypalwiretransferpaypal02paypal04

Help you to save your cost and time

Strict quality inspection and Reliable package for goods

Fast Reliable delivery to save time

Provide 365 days warranty after-sales service

1N1202A information

  • GeneSiC Semiconductor 1N1202A technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
  • Product Status:Active
  • Mounting Type:Chassis, Stud Mount
  • Package / Case:DO-203AA, DO-4, Stud
  • Supplier Device Package:DO-4
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Diode Type:Standard
  • Current - Average Rectified ( Io):12A
  • Voltage - Forward ( Vf) ( Max) @ If:1.1 V @ 12 A
  • Current - Reverse Leakage @ Vr:10 µA @ 50 V
  • Capacitance @ Vr, F:-
  • Voltage - D C Reverse ( Vr) ( Max):200 V
  • Reverse Recovery Time (trr):-
  • Operating Temperature - Junction:-65°C ~ 200°C
  • EU RoHS Status:RoHS Compliant
  • REACH Status:REACH is not affected
  • US ECCN:EAR99
  • China RoHS Status:Green Symbol: Green and environmentally friendly product
1N1202A provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry. In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
GeneSiC Semiconductor Related product recommendations

We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.