Images are for reference only.
1 : $10.6830
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
SemiQ GP2T080A120U
Manufacturer # :GP2T080A120U
Manufacturer :SemiQ
Dasenic # :GP2T080A120U-DS
Datasheet : GP2T080A120U Datasheet
Customer # :
Description : SIC MOSFET 1200V 80M TO-247-3L
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 3447
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 10.683
Total :$ 10.68
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
GP2T080A120U information
SemiQ GP2T080A120U technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:SiC (Silicon Carbide Junction Transistor)
- Supplier Device Package:TO-247-3
- Power Dissipation ( Max):188W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:35A (Tc)
- Rds On ( Max) @ Id, Vgs:100mOhm @ 20A, 20V
- Vgs(th) ( Max) @ Id:4V @ 10mA
- Gate Charge ( Qg) ( Max) @ Vgs:58 nC @ 20 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1377 pF @ 1000 V
- Drive Voltage ( Max Rds On, Min Rds On):20V
- Vgs ( Max):+25V, -10V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GP2T080A120U provided by SemiQ
SemiQ Inc. is a US based developer and manufacturer of Silicon Carbide (SiC) power semiconductor devices and materials including:SiC Power MPS Diodes,SiC Modules,SiC Power MOSFETs,SiC Custom Modules,SiC Bare Die,SiC Custom N-Type Epi Wafers,etc.
SemiQ is privately held and partially employee owned.SemiQ (previously known as Global Power Technologies Group) began developing Silicon Carbide technologies in 2012 at its headquarters in Southern California where it also grows Epi and designs devices.Recently, SemiQ released its Gen 3 SiC Schottky diodes (Merged PiN Schottky type) which included improvements in surge current, moisture resistance, and overall robustness and ruggedness.
SemiQ products are deployed in EV charging systems, induction heating, power supplies, Fuel Cell power generation, and solar inverters around the world.Additionally, SemiQ offers power conversion application expertise and has extensive experience designing inverters of 3.3kW, 6.6kW and above.
SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company has a fully redundant SiC supply chain.
SemiQ Related product recommendations
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.