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  • SemiQ GP2T080A120U

    SIC MOSFET 1200V 80M TO-247-3L
  • part number has RoHS
  • Mfr.Part # :GP2T080A120U
  • Manufacturer :SemiQ
  • Dasenic # :GP2T080A120U-DS
  • Datasheet :pdf download GP2T080A120U Datasheet
  • Description : SIC MOSFET 1200V 80M TO-247-3L
  • Package :-
  • Quantity :
    Unit Price : $ 10.683Total : $ 10.68
  • Delivery Time :Ship Within 48 Hours
  • Shipping Origin :Shenzhen or Hong Kong Warehouse
  • Delivery :
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  • Payment :
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In Stock: 3087
( MOQ : 1 PCS )
Pricing (USD) : * All prices are in USD
QuantityUnit PriceTotal
1 +$ 10.6830$ 10.68
10 +$ 8.1180$ 81.18
30 +$ 6.5250$ 195.75
270 +$ 6.2910$ 1698.57

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SemiQ GP2T080A120U technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Technology:SiC (Silicon Carbide Junction Transistor)
Supplier Device Package:TO-247-3
Power Dissipation ( Max):188W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):1200 V
Current - Continuous Drain ( Id) @ 25° C:35A (Tc)
Rds On ( Max) @ Id, Vgs:100mOhm @ 20A, 20V
Vgs(th) ( Max) @ Id:4V @ 10mA
Gate Charge ( Qg) ( Max) @ Vgs:58 nC @ 20 V
Input Capacitance ( Ciss) ( Max) @ Vds:1377 pF @ 1000 V
Drive Voltage ( Max Rds On, Min Rds On):20V
Vgs ( Max):+25V, -10V
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product
GP2T080A120U provided by SemiQ
SemiQ Inc. is a US based developer and manufacturer of Silicon Carbide (SiC) power semiconductor devices and materials including:SiC Power MPS Diodes,SiC Modules,SiC Power MOSFETs,SiC Custom Modules,SiC Bare Die,SiC Custom N-Type Epi Wafers,etc. SemiQ is privately held and partially employee owned.SemiQ (previously known as Global Power Technologies Group) began developing Silicon Carbide technologies in 2012 at its headquarters in Southern California where it also grows Epi and designs devices.Recently, SemiQ released its Gen 3 SiC Schottky diodes (Merged PiN Schottky type) which included improvements in surge current, moisture resistance, and overall robustness and ruggedness. SemiQ products are deployed in EV charging systems, induction heating, power supplies, Fuel Cell power generation, and solar inverters around the world.Additionally, SemiQ offers power conversion application expertise and has extensive experience designing inverters of 3.3kW, 6.6kW and above. SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company has a fully redundant SiC supply chain.
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