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SemiQ GCMX080B120S1-E1

SIC 1200V 80M MOSFET SOT-227
part number has RoHS
Manufacturer # :GCMX080B120S1-E1
Manufacturer :SemiQ
Dasenic # :GCMX080B120S1-E1-DS
Customer # :
Description : SIC 1200V 80M MOSFET SOT-227
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 20.8440$ 20.84
10+$ 16.4610$ 164.61
20+$ 16.4520$ 329.04
100+$ 14.1300$ 1413
200+$ 14.1210$ 2824.2
In Stock: 1554
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 20.844
Total :$ 20.84
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GCMX080B120S1-E1 information

  • SemiQ GCMX080B120S1-E1 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Active
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Technology:SiC (Silicon Carbide Junction Transistor)
  • Supplier Device Package:SOT-227
  • Power Dissipation ( Max):142W (Tc)
  • F E T Type:N-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):1200 V
  • Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
  • Rds On ( Max) @ Id, Vgs:100mOhm @ 20A, 20V
  • Vgs(th) ( Max) @ Id:4V @ 10mA
  • Gate Charge ( Qg) ( Max) @ Vgs:58 nC @ 20 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:1336 pF @ 1000 V
  • Drive Voltage ( Max Rds On, Min Rds On):20V
  • Vgs ( Max):+25V, -10V
  • EU RoHS Status:ROHS3 Compliant
  • MSL Rating:1 (Unlimited, 30°C/85%RH)
  • REACH Status:REACH Affected
  • US ECCN:EAR99
  • HTS US:8541.29.0095
  • China RoHS Status:Green Symbol: Green and environmentally friendly product
GCMX080B120S1-E1 provided by SemiQ
SemiQ Inc. is a US based developer and manufacturer of Silicon Carbide (SiC) power semiconductor devices and materials including:SiC Power MPS Diodes,SiC Modules,SiC Power MOSFETs,SiC Custom Modules,SiC Bare Die,SiC Custom N-Type Epi Wafers,etc. SemiQ is privately held and partially employee owned.SemiQ (previously known as Global Power Technologies Group) began developing Silicon Carbide technologies in 2012 at its headquarters in Southern California where it also grows Epi and designs devices.Recently, SemiQ released its Gen 3 SiC Schottky diodes (Merged PiN Schottky type) which included improvements in surge current, moisture resistance, and overall robustness and ruggedness. SemiQ products are deployed in EV charging systems, induction heating, power supplies, Fuel Cell power generation, and solar inverters around the world.Additionally, SemiQ offers power conversion application expertise and has extensive experience designing inverters of 3.3kW, 6.6kW and above. SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company has a fully redundant SiC supply chain.
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