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Samsung K4F6E3S4HM-MGCJ
Manufacturer # :K4F6E3S4HM-MGCJ
Manufacturer :Samsung
Dasenic # :K4F6E3S4HM-MGCJ-DS
Datasheet : K4F6E3S4HM-MGCJ Datasheet
Customer # :
Description : BGA-200 DDR SDRAM
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 7200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 7.6833
Total :$ 7.68
Delivery :
Payment :
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K4F6E3S4HM-MGCJ information
Samsung K4F6E3S4HM-MGCJ technical specifications, attributes, parameters.
- Category:Integrated Circuits (ICs)/Memory Integrated Circuit
- Product Status:Active
- Package / Case:200-TFBGA
- Operating Temperature:-25°C ~ 85°C
- Voltage- Supply:1.1V
- Memory Size:16Gbit
- Memory Type:Volatile
- Clock Frequency:1866 MHz
- Memory Format:DRAM
- Memory Interface:Parallel
- Memory Organization:512M x 32
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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