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ROHM Semiconductor SH8K26GZ0TB1
40V NCH+NCH POWER MOSFET : MIDDL
SH8K26GZ0TB1 Datasheet| Quantity | Unit Price | Total |
| 10+ | $ 0.853200 | $ 8.53 |
| 2500+ | $ 0.474000 | $ 1185 |
| 5000+ | $ 0.451400 | $ 2257 |
| 12500+ | $ 0.430600 | $ 5382.5 |
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Power - Max:2W (Ta)
- Supplier Device Package:8-SOP
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):40V
- Current - Continuous Drain ( Id) @ 25° C:6A (Ta)
- Rds On ( Max) @ Id, Vgs:38mOhm @ 6A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:2.9nC @ 5V
- Input Capacitance ( Ciss) ( Max) @ Vds:280pF @ 10V
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