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ROHM Semiconductor RV4E031RPHZGTCR1
MOSFET P-CH 30V 3.1A DFN1616-6W
Manufacturer # :RV4E031RPHZGTCR1
Manufacturer :ROHM Semiconductor
Dasenic # :221B54-DS
Datasheet :
RV4E031RPHZGTCR1 Datasheet
RV4E031RPHZGTCR1 DatasheetSample :
Customer # :
Description : MOSFET P-CH 30V 3.1A DFN1616-6W 6-PowerWFDFN Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.720000 | $ 0.72 |
| 10+ | $ 0.623700 | $ 6.24 |
| 100+ | $ 0.431600 | $ 43.16 |
| 500+ | $ 0.360600 | $ 180.3 |
| 1000+ | $ 0.306900 | $ 306.9 |
In Stock: 6721
MOQ :1 PCS
Packaging :6-PowerWFDFN Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.72
Total :$ 0.72
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount, Wettable Flank
- Package / Case:6-PowerWFDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DFN1616-6W
- Power Dissipation ( Max):1.5W (Ta)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:3.1A (Ta)
- Rds On ( Max) @ Id, Vgs:105mOhm @ 3.1A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:4.8 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:460 pF @ 10 V
- Vgs ( Max):±20V
- Series:Automotive, AEC-Q101
- Base Product Number:RV4E031
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
