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ROHM Semiconductor RQ3E180BNTB
MOSFET N-CHANNEL 30V 39A 8HSMT
Manufacturer # :RQ3E180BNTB
Manufacturer :ROHM Semiconductor
Dasenic # :F62E57-DS
Datasheet :
RQ3E180BNTB Datasheet
RQ3E180BNTB DatasheetSample :
Customer # :
Description : MOSFET N-CHANNEL 30V 39A 8HSMT 8-PowerVDFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 5+ | $ 0.224100 | $ 1.12 |
| 50+ | $ 0.191700 | $ 9.59 |
| 100+ | $ 0.185400 | $ 18.54 |
| 200+ | $ 0.184500 | $ 36.9 |
| 500+ | $ 0.171000 | $ 85.5 |
In Stock: 6491
MOQ :1 PCS
Packaging :8-PowerVDFN
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.2241
Total :$ 0.22
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Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:8-PowerVDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-HSMT (3.2x3)
- Power Dissipation ( Max):2W (Ta), 20W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:39A (Tc)
- Rds On ( Max) @ Id, Vgs:3.9mOhm @ 18A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:37 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3500 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
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