ROHM Semiconductor DTA115EMT2L technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Single, Pre-Biased
Product Status:Active
Mounting Type:Surface Mount
Package / Case:SOT-723
Power - Max:150 mW
Supplier Device Package:VMT3
Transistor Type:PNP - Pre-Biased
Current - Collector ( Ic) ( Max):20 mA
Voltage - Collector Emitter Breakdown ( Max):50 V
Vce Saturation ( Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff ( Max):500nA
D C Current Gain (h F E) ( Min) @ Ic, Vce:82 @ 5mA, 5V
Frequency - Transition:250 MHz
Resistor - Base ( R1):100 kOhms
Resistor - Emitter Base ( R2):100 kOhms
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
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DTA115EMT2L Datasheet
