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ROHM Semiconductor BD2320EFJ-LAE2
Manufacturer # :BD2320EFJ-LAE2
Manufacturer :ROHM Semiconductor
Dasenic # :BD2320EFJ-LAE2-DS
Datasheet : BD2320EFJ-LAE2 Datasheet
Customer # :
Description : 100 V VB 3.5 A/4.5 A PEAK CURREN
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In Stock: 14151
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 5.2479
Total :$ 5.25
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BD2320EFJ-LAE2 information
ROHM Semiconductor BD2320EFJ-LAE2 technical specifications, attributes, parameters.
- Category:Integrated Circuits (ICs)/PMIC - Gate Drivers
- Product Status:Active
- Package / Case:8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Operating Temperature:-40°C ~ 125°C (TA)
- Voltage- Supply:7.5V ~ 14.5V
- Input Type:Non-Inverting
- Channel Type:Independent
- Gate Type:N-Channel MOSFET
- Numberof Drivers:2
- Rise/ Fall Time( Typ):8ns, 6ns
- Driven Configuration:High-Side and Low-Side
- Logic Voltage- V I L V I H:1.7V, 1.5V
- Current- Peak Output( Source Sink):3.5A, 4.5A
- High Side Voltage- Max( Bootstrap):100 V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
BD2320EFJ-LAE2 provided by ROHM Semiconductor
ROHM Semiconductor(TYO:6963)is one of the world's leading semiconductor and electronic component manufacturers. Founded in 1958, it is a multinational group company headquartered in Kyoto, Japan.
ROHM has expanded its business domain by building up its design and manufacturing technologies, quality assurance technologies, and solution proposal capabilities for more than 60 years since its establishment. These technologies and capabilities accumulated over its long history carry four main features: integral technologies, IDM (vertical integration as an integrated device manufacturer), a wide range of products, and customer orientation. Our focus on power and analog technology solutions where we can maximally leverage these strengths, we will provide high added value to our customers and contribute to solving social issues.
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