Infineon Technologies SMBTA06E6327HTSA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Single
Product Status:Not For New Designs
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Power - Max:330 mW
Supplier Device Package:PG-SOT23
Transistor Type:NPN
Current - Collector ( Ic) ( Max):500 mA
Voltage - Collector Emitter Breakdown ( Max):80 V
Vce Saturation ( Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff ( Max):100nA
D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 100mA, 1V
Frequency - Transition:100MHz
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0075
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
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SMBTA06E6327HTSA1 Datasheet
