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Nexperia USA Inc. PMZB350UPE,315
MOSFET P-CH 20V 1A DFN1006B-3
Manufacturer # :PMZB350UPE,315
Manufacturer :Nexperia USA Inc.
Dasenic # :PMZB350UPE,315-DS
Datasheet :
PMZB350UPE,315 Datasheet
PMZB350UPE,315 DatasheetCustomer # :
Description : MOSFET P-CH 20V 1A DFN1006B-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.0740 | $ 0.74 |
| 10000+ | $ 0.0370 | $ 370 |
In Stock: 29466
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.074
Total :$ 0.07
Delivery :
Payment :
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PMZB350UPE,315 information
Nexperia USA Inc. PMZB350UPE,315 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:3-XFDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DFN1006B-3
- Power Dissipation ( Max):360mW (Ta), 3.125W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:1A (Ta)
- Rds On ( Max) @ Id, Vgs:450mOhm @ 300mA, 4.5V
- Vgs(th) ( Max) @ Id:950mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:1.9 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:127 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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