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Infineon Technologies IPA60R190C6

POWER FIELD-EFFECT TRANSISTOR, 2
part number has RoHS
Manufacturer # :IPA60R190C6
Manufacturer :Infineon Technologies
Dasenic # :3A4BAB-DS
Customer # :
Description : POWER FIELD-EFFECT TRANSISTOR, 2 - Bulk
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 2.916000$ 2.92
10+$ 2.448000$ 24.48
25+$ 2.313000$ 57.83
100+$ 1.980000$ 198
250+$ 1.872000$ 468
In Stock: 1858
MOQ :1 PCS
Packaging :- Bulk
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.916
Total :$ 2.92
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IPA60R190C6 information

Product Details
of Infineon Technologies IPA60R190C6 The IPA60R190C6 is a power MOSFET that belongs to the CoolMOS™ technology family by Infineon. It is designed for high-efficiency and high-performance switching applications. Its features include a low R_DS(on), high-speed switching capabilities, and high breakdown voltage, making it suitable for various power supply designs and applications. Functions 1. Switching Device: Acts as an electronic switch in power supply circuits. 2. High Efficiency: Reduces conduction loss and improves overall efficiency in power systems. 3. Temperature Resilience: Maintains performance across a wide temperature range. 4. Fast Switching: Facilitates rapid on/off switching, enhancing the performance in high-frequency applications. Applications - Power Supply Circuits: Used in AC-DC converters, DC-DC converters, and inverters. - Consumer Electronics: Power management in devices like televisions, laptops, and chargers. - Industrial Applications: Serving in motor drives and industrial power supplies. - Renewable Energy: Applications in solar inverters and wind turbine converters. Alternative Parts When looking for alternatives to the IPA60R190C6, consider other MOSFETs in the same class from various manufacturers, such as: - Infineon: IPA60R190C5 - Vishay: SIHP10N60E - STMicroelectronics: STP60NF06L - ON Semiconductor: NTP16N60 Embedded Modules The IPA60R190C6 can be found in various power modules that might integrate additional functions such as drivers, protection circuitry, and isolators. Look for: - Integrated Power Modules (IPMs) - Motor Controller Modules - Power Management ICs that include multiple switching devices and control logic. Related Q&A 1. Q: What are the key specifications of the Infineon IPA60R190C6? A: The IPA60R190C6 features a maximum voltage rating of 600V, a maximum continuous drain current of 18A, and an R_DS(on) of 0.19 ohm, making it suitable for high-voltage applications. 2. Q: In what types of circuits can I use the IPA60R190C6? A: It is commonly used in high-efficiency power converters, power supply circuits, and applications requiring fast-switching capabilities, such as power management in renewable energy systems and consumer electronics. 3. Q: How does the CoolMOS™ technology benefit the IPA60R190C6? A: CoolMOS™ technology helps provide lower switching losses and reduced thermal management challenges, leading to higher efficiency and better performance in high-frequency power applications. 4. Q: What are some design considerations when using the IPA60R190C6 in circuits? A: Designers should consider thermal management (heat sinking), gate drive requirements, and the switching frequency to ensure optimal operation and reliability of the MOSFET in their applications. 5. Q: Can I use the IPA60R190C6 in high-temperature environments? A: Yes, the IPA60R190C6 is designed to operate efficiently over a wide temperature range, but proper thermal management is vital in high-temperature applications to maintain performance and longevity.
  • Infineon Technologies IPA60R190C6 technical specifications, attributes, parameters.
  • Category:Integrated Circuits (ICs)/Specialized ICs
  • Product Status:Active
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:PG-TO220-3-111
  • Power Dissipation ( Max):34W (Tc)
  • F E T Type:N-Channel
  • Drain to Source Voltage ( Vdss):600 V
  • Current - Continuous Drain ( Id) @ 25° C:20.2A (Tc)
  • Rds On ( Max) @ Id, Vgs:190mOhm @ 9.5A, 10V
  • Vgs(th) ( Max) @ Id:3.5V @ 630µA
  • Gate Charge ( Qg) ( Max) @ Vgs:63 nC @ 10 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:1400 pF @ 100 V
  • Drive Voltage ( Max Rds On, Min Rds On):10V
  • Vgs ( Max):±20V
  • Series:CoolMOS™
  • Packaging:Bulk
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