Onsemi FDPF770N15A technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220F-3
Power Dissipation ( Max):21W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):150 V
Current - Continuous Drain ( Id) @ 25° C:10A (Tc)
Rds On ( Max) @ Id, Vgs:77mOhm @ 10A, 10V
Vgs(th) ( Max) @ Id:4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:11.2 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:765 pF @ 75 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±20V
US ECCN:EAR99
HTS US:8542.39.0001
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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FDPF770N15A Datasheet
