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Renesas Electronics ISL6613BCRZ-T
Half Bridge MOSFET 1.25A 7V~13.2V 2A DFN-10-EP(3x3) Gate Drive ICs![part number has RoHS](/img/RoHS2.png)
Manufacturer # :ISL6613BCRZ-T
Manufacturer :Renesas Electronics
Dasenic # :A8FB80-DS
Datasheet :
ISL6613BCRZ-T Datasheet
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Description : Half Bridge MOSFET 1.25A 7V~13.2V 2A DFN-10-EP(3x3) Gate Drive ICs DFN-10-EP(3x3)
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Quantity | Unit Price | Total |
1+ | $ 15.084400 | $ 15.08 |
25+ | $ 14.788600 | $ 369.72 |
100+ | $ 14.197100 | $ 1419.71 |
500+ | $ 13.605500 | $ 6802.75 |
1000+ | $ 12.866100 | $ 12866.1 |
In Stock: 7200
MOQ :1 PCS
Packaging :DFN-10-EP(3x3)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 15.0844
Total :$ 15.08
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- Category:Integrated Circuits (ICs)/Gate Drivers for Power MOSFETs and IGBTs
- Product Status:Obsolete
- Operating Temperature:0°C ~ 125°C (TJ)
- Package / Case:10-VFDFN Exposed Pad
- Input Type:Non-Inverting
- Supplier Device Package:10-DFN (3x3)
- Voltage - Supply:7V ~ 13.2V
- Channel Type:Synchronous
- Driven Configuration:Half-Bridge
- Number of Drivers:2
- Gate Type:N-Channel MOSFET
- Current - Peak Output ( Source, Sink):1.25A, 2A
- High Side Voltage - Max ( Bootstrap):36 V
- Rise / Fall Time ( Typ):26ns, 18ns