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IDT, Integrated Device Technology Inc F0109NBTI
Manufacturer # :F0109NBTI
Manufacturer :IDT, Integrated Device Technology Inc
Dasenic # :F0109NBTI-DS
Datasheet : F0109NBTI Datasheet
Customer # :
Description : F0109 DUAL LNA
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 5748
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 5.562
Total :$ 5.56
Delivery :
Payment :
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F0109NBTI information
IDT, Integrated Device Technology Inc F0109NBTI technical specifications, attributes, parameters.
- Category:RF and Wireless/RF Amplifiers
- Product Status:Active
- Package / Case:16-WQFN Exposed Pad
- Frequency:650MHz ~ 1GHz
- Gain:20.5dB
- P1d B:24dBm
- Voltage- Supply:4.75V ~ 5.25V
- Current- Supply:115mA
- R F Type:3G/4G/5G
- Noise Figure:0.5dB
- Test Frequency:650MHz ~ 1GHz
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
F0109NBTI provided by IDT, Integrated Device Technology Inc
Renesas Electronics Corporation (TSE: 6723) is the world's premier supplier of microcontrollers and a preferred provider of advanced semiconductor solutions.
Renesas Electronics was established in November 2002 through the merger of two major Japanese semiconductor companies: Hitachi Semiconductor and Mitsubishi Electric. As a global leader in microcontrollers, analog, power, and SoC products, Renesas provides comprehensive solutions for a broad range of applications, including automotive, industrial, home electronics, office automation, and information communication technology.
The company's global headquarters are located in Tokyo.Renesas Electronics has a significant global footprint, with offices, research and development centers, manufacturing facilities, and sales operations in Europe, the Middle East, Asia, and North America.
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