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Rectron Semiconductor RM4N650IP
MOSFET N-CHANNEL 650V 4A TO251![part number has RoHS](/img/RoHS2.png)
Manufacturer # :RM4N650IP
Manufacturer :Rectron Semiconductor
Dasenic # :080A57-DS
Datasheet :
RM4N650IP Datasheet
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Description : MOSFET N-CHANNEL 650V 4A TO251 TO-251-3 Stub Leads, IPak Tube
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Quantity | Unit Price | Total |
10+ | $ 1.080000 | $ 10.8 |
2400+ | $ 0.720000 | $ 1728 |
5600+ | $ 0.704000 | $ 3942.4 |
In Stock: 2690
MOQ :1 PCS
Packaging :TO-251-3 Stub Leads, IPak Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.08
Total :$ 1.08
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Stub Leads, IPak
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-251
- Power Dissipation ( Max):46W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:4A (Tc)
- Rds On ( Max) @ Id, Vgs:1.2Ohm @ 2.5A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 250µA
- Input Capacitance ( Ciss) ( Max) @ Vds:280 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- Packaging:Tube