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Jiangsu Changjing Electronics 2N7002K

Small Signal Field-Effect Transistor - 3A I(D) - 60V - 1-Element - N-Channel - Silicon - Metal-oxide Semiconductor FET
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Manufacturer # :2N7002K
Dasenic # :22621E-DS
Customer # :
Description : Small Signal Field-Effect Transistor - 3A I(D) - 60V - 1-Element - N-Channel - Silicon - Metal-oxide Semiconductor FET SOT-23
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QuantityUnit PriceTotal
10+$ 0.038300$ 0.38
3000+$ 0.021300$ 63.9
6000+$ 0.019200$ 115.2
15000+$ 0.016700$ 250.5
30000+$ 0.015100$ 453
In Stock: 44022
MOQ :1 PCS
Packaging :SOT-23
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0383
Total :$ 0.04
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2N7002K information

Product Details
The 2N7002K is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is commonly used in low-power switching applications and offers good efficiency and fast switching times. The MOSFET features a relatively low threshold voltage and is designed for quick turn-on and turn-off. Functions - Switching: Acts as a switch that can control large currents with small input signals. - Amplification: Can be utilized in small-signal amplification applications. - Voltage Regulation: It can be used in voltage regulation circuits, turning on/off based on threshold levels. Applications - Low-Power Switching: Ideal for controlling loads like LEDs or motors in hobby electronics and small devices. - Digital Logic Circuits: Commonly used in digital circuits for signal routing and processing. - Amplifiers: Utilized in audio amplifiers and signal processing applications. - Power Supply Control: Can be used in power management applications to switch devices on and off based on control signals. Alternative Parts - BS170: Another N-channel MOSFET with similar specifications. - 2N7000: A more robust version suitable for applications needing a higher current. - 2N7002: A similar device with slightly different characteristics. - IRF520: Suitable for high power applications where higher current handling is required. Embedded Modules - Motor Driver Shields: You can find embedded modules or driver shields that utilize smaller MOSFETs like the 2N7002K for controlling motors in robotics. - Relay Modules: Some relay modules use MOSFETs as switching elements for activating larger loads. - Signal Processing Boards: Development boards may integrate these MOSFETs for signal regulation and amplification. Q&A Section 1. Q: What does the "K" at the end of 2N7002K signify? - A: The "K" typically indicates that this is a specific version or variant of the 2N7002, often denoting a packaging or process variation that conforms to specific needs. 2. Q: Can the 2N7002K be used in high-frequency applications? - A: Yes, the 2N7002K is capable of operating at high frequencies, making it suitable for applications like RF amplification and digital signal processing, although for optimal performance, the exact frequency capabilities should be assessed against the specific parameters. 3. Q: What is the maximum drain current for the 2N7002K? - A: The maximum continuous drain current for the 2N7002K is typically around 200 mA, but it is crucial to check the datasheet for specific applications and thermal considerations. 4. Q: How does the threshold voltage of the 2N7002K affect its operation? - A: The threshold voltage, usually around 2-4V for the 2N7002K, is the minimum gate-to-source voltage needed to turn the MOSFET on. If the gate voltage is below this threshold, the device will be in the off state, and if above, it will enter the on state, allowing current to flow from drain to source. 5. Q: What are the thermal considerations when using the 2N7002K in a circuit? - A: When using the 2N7002K, it is important to consider the thermal resistance and how much power it will dissipate in your application. Adequate heatsinking or thermal management may be required if operating near the maximum ratings to prevent overheating.
  • Jiangsu Changjing Electronics 2N7002K technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Single MOSFETs
  • Product Status:Active
  • Operating Temperature:-55°C ~ 150°C
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:SOT-23
  • Power Dissipation ( Max):500mW (Ta)
  • F E T Type:N-Channel
  • Drain to Source Voltage ( Vdss):60 V
  • Current - Continuous Drain ( Id) @ 25° C:500mA (Ta)
  • Rds On ( Max) @ Id, Vgs:900mOhm @ 300mA, 10V
  • Vgs(th) ( Max) @ Id:2.5V @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:0.31 nC @ 10 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:23.8 pF @ 10 V
  • Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
  • Vgs ( Max):±20V
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