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PN Junction Semiconductor PAA12400BM3

1200V HALF-BRIDGE
part number has RoHS
Manufacturer # :PAA12400BM3
Dasenic # :PAA12400BM3-DS
Customer # :
Description : 1200V HALF-BRIDGE
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
In Stock: 3000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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PAA12400BM3 information

  • PN Junction Semiconductor PAA12400BM3 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
  • Product Status:Active
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Power - Max:-
  • Supplier Device Package:Module
  • F E T Type:2 N-Channel (Half Bridge)
  • F E T Feature:Silicon Carbide (SiC)
  • Drain to Source Voltage ( Vdss):1200V (1.2kV)
  • Current - Continuous Drain ( Id) @ 25° C:350A
  • Rds On ( Max) @ Id, Vgs:7.3mOhm @ 300A, 20V
  • Vgs(th) ( Max) @ Id:5V @ 100mA
  • Gate Charge ( Qg) ( Max) @ Vgs:-
  • Input Capacitance ( Ciss) ( Max) @ Vds:29.5pF @ 1000V
  • EU RoHS Status:RoHS Compliant
  • REACH Status:REACH is not affected
  • US ECCN:EAR99
  • China RoHS Status:Green Symbol: Green and environmentally friendly product
PAA12400BM3 provided by PN Junction Semiconductor
PN Junction Semiconductor was established in September 2018 as a leading brand in third-generation power semiconductor devices in China. The company's main products are automotive-grade silicon carbide MOSFETs, silicon carbide SBDs, and gallium nitride power devices. The company has the most comprehensive catalog of silicon carbide power devices in China, with silicon carbide MOSFETs and SBDs covering various voltage levels and current-carrying capacities, all of which have passed AEC-Q101 testing and certification, and can meet various application scenarios of customers. Dr. Huang Xing, the founder of PN Junction Semiconductor, has been deeply involved in the design and development of silicon carbide and gallium nitride power devices since 2009, and has studied under Professor B. Jayant Baliga, the inventor of IGBT, and Professor Alex Huang, the inventor of thyristor. Currently, PN Junction Semiconductor has released more than 100 different models of silicon carbide diodes, silicon carbide MOSFETs, silicon carbide power modules, and GaN HEMT products on the 650V, 1200V, and 1700V voltage platforms. Mass-produced products have been widely used in electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications, and other fields, providing continuous and stable supply to Tier 1 manufacturers.
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