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PN Junction Semiconductor PAA12400BM3
1200V HALF-BRIDGE
- Mfr.Part # :PAA12400BM3
- Manufacturer :PN Junction Semiconductor
- Dasenic # :PAA12400BM3-DS
- Datasheet :
PAA12400BM3 Datasheet
- Description : 1200V HALF-BRIDGE
- Package :-
- Quantity :Unit Price : $ 0Total : $ 0.00
- Delivery Time :Ship Within 48 Hours
- Shipping Origin :Shenzhen or Hong Kong Warehouse
- Delivery :
- Payment :
In Stock: 3000
( MOQ : 1 PCS )Pricing (USD) : * All prices are in USD
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PN Junction Semiconductor PAA12400BM3 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Power - Max:-
Supplier Device Package:Module
F E T Type:2 N-Channel (Half Bridge)
F E T Feature:Silicon Carbide (SiC)
Drain to Source Voltage ( Vdss):1200V (1.2kV)
Current - Continuous Drain ( Id) @ 25° C:350A
Rds On ( Max) @ Id, Vgs:7.3mOhm @ 300A, 20V
Vgs(th) ( Max) @ Id:5V @ 100mA
Gate Charge ( Qg) ( Max) @ Vgs:-
Input Capacitance ( Ciss) ( Max) @ Vds:29.5pF @ 1000V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
PAA12400BM3 provided by PN Junction Semiconductor
PN Junction Semiconductor was established in September 2018 as a leading brand in third-generation power semiconductor devices in China. The company's main products are automotive-grade silicon carbide MOSFETs, silicon carbide SBDs, and gallium nitride power devices. The company has the most comprehensive catalog of silicon carbide power devices in China, with silicon carbide MOSFETs and SBDs covering various voltage levels and current-carrying capacities, all of which have passed AEC-Q101 testing and certification, and can meet various application scenarios of customers.
Dr. Huang Xing, the founder of PN Junction Semiconductor, has been deeply involved in the design and development of silicon carbide and gallium nitride power devices since 2009, and has studied under Professor B. Jayant Baliga, the inventor of IGBT, and Professor Alex Huang, the inventor of thyristor. Currently, PN Junction Semiconductor has released more than 100 different models of silicon carbide diodes, silicon carbide MOSFETs, silicon carbide power modules, and GaN HEMT products on the 650V, 1200V, and 1700V voltage platforms. Mass-produced products have been widely used in electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications, and other fields, providing continuous and stable supply to Tier 1 manufacturers.
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