Images are for reference only.

Share

1 : $9.9600

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Certifications for ISO9001
Certifications for ISO13485
Certifications for ISO45001
Certifications for ISO14001
  • PN Junction Semiconductor P3M06300D8

    SICFET N-CH 650V 9A DFN8*8
  • part number has RoHS
  • Mfr.Part # :P3M06300D8
  • Manufacturer :PN Junction Semiconductor
  • Dasenic # :P3M06300D8-DS
  • Datasheet :pdf download P3M06300D8 Datasheet
  • Description : SICFET N-CH 650V 9A DFN8*8
  • Package :-
  • Quantity :
    Unit Price : $ 9.96Total : $ 9.96
  • Delivery Time :Ship Within 48 Hours
  • Shipping Origin :Shenzhen or Hong Kong Warehouse
  • Delivery :
    dhlupsfedex
  • Payment :
    paypalwiretransferpaypal02paypal04
In Stock: 1633
( MOQ : 1 PCS )
Pricing (USD) : * All prices are in USD
QuantityUnit PriceTotal
1 +$ 9.9600$ 9.96
11 +$ 9.4618$ 104.08
101 +$ 9.9600$ 1005.96

Request a Quote

Help you to save your cost and time

Strict quality inspection and Reliable package for goods

Fast Reliable delivery to save time

Provide 365 days warranty after-sales service

PN Junction Semiconductor P3M06300D8 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:DFN8*8
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:DFN8*8
Power Dissipation ( Max):32W
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):650 V
Current - Continuous Drain ( Id) @ 25° C:9A
Rds On ( Max) @ Id, Vgs:500mOhm @ 4.5A, 15V
Vgs(th) ( Max) @ Id:2.2V @ 5mA
Gate Charge ( Qg) ( Max) @ Vgs:-
Input Capacitance ( Ciss) ( Max) @ Vds:-
Drive Voltage ( Max Rds On, Min Rds On):15V
Vgs ( Max):+20V, -8V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
P3M06300D8 provided by PN Junction Semiconductor
PN Junction Semiconductor was established in September 2018 as a leading brand in third-generation power semiconductor devices in China. The company's main products are automotive-grade silicon carbide MOSFETs, silicon carbide SBDs, and gallium nitride power devices. The company has the most comprehensive catalog of silicon carbide power devices in China, with silicon carbide MOSFETs and SBDs covering various voltage levels and current-carrying capacities, all of which have passed AEC-Q101 testing and certification, and can meet various application scenarios of customers. Dr. Huang Xing, the founder of PN Junction Semiconductor, has been deeply involved in the design and development of silicon carbide and gallium nitride power devices since 2009, and has studied under Professor B. Jayant Baliga, the inventor of IGBT, and Professor Alex Huang, the inventor of thyristor. Currently, PN Junction Semiconductor has released more than 100 different models of silicon carbide diodes, silicon carbide MOSFETs, silicon carbide power modules, and GaN HEMT products on the 650V, 1200V, and 1700V voltage platforms. Mass-produced products have been widely used in electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications, and other fields, providing continuous and stable supply to Tier 1 manufacturers.
PN Junction Semiconductor Related product recommendations

We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.

Ratings and Reviews

Ratings

Please rate the product !

Please submit comments after logging into your account.

  • RFQ