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PN Junction Semiconductor P3D12005E2
DIODE SIL CARB 1.2KV 19A TO252-2
Manufacturer # :P3D12005E2
Manufacturer :PN Junction Semiconductor
Dasenic # :8785D4-DS
Datasheet :
P3D12005E2 Datasheet
P3D12005E2 DatasheetSample :
Customer # :
Description : DIODE SIL CARB 1.2KV 19A TO252-2 TO-252-2 Tape & Reel (TR)
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.050000 | $ 4.05 |
| 11+ | $ 3.654000 | $ 40.19 |
| 101+ | $ 3.024000 | $ 305.42 |
| 501+ | $ 2.632500 | $ 1318.88 |
| 1001+ | $ 2.308500 | $ 2310.81 |
In Stock: 6000
MOQ :1 PCS
Packaging :TO-252-2 Tape & Reel (TR)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 4.05
Total :$ 4.05
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- Category:Discrete Semiconductor Devices/Schottky Diodes
- Product Status:Active
- Technology:SiC (Silicon Carbide) Schottky
- Supplier Device Package:TO-252-2
- Speed:No Recovery Time > 500mA (Io)
- Current - Average Rectified ( Io):19A
- Current - Reverse Leakage @ Vr:44 µA @ 650 V
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- Series:P3D
