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PN Junction Semiconductor P3D06010T2
In Stock: 2394
MOQ: 1
5 Price Tiers
- Mfr.Part # :P3D06010T2
- Manufacturer :PN Junction Semiconductor
- Dasenic # :P3D06010T2-DS
- Datasheet : P3D06010T2 Datasheet PDF
- Description : DIODE SCHOTTKY 600V 10A TO220-2
- Package :-
- Unit Price: $8.3200Total: $8.32
Quantity | Unit Price | You Save |
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1-1 | $8.3200 | - |
2-11 | $7.5236 | 9.6% save |
12-101 | $8.3200 | - |
102-501 | $5.4200 | 34.9% save |
502-1001 | $4.7400 | 43.0% save |
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PN Junction Semiconductor P3D06010T2 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
Product Status:Active
Mounting Type:-
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Speed:No Recovery Time > 500mA (Io)
Diode Type:Silicon Carbide Schottky
Current - Average Rectified ( Io):30A (DC)
Voltage - Forward ( Vf) ( Max) @ If:-
Current - Reverse Leakage @ Vr:44 µA @ 650 V
Capacitance @ Vr, F:-
Voltage - D C Reverse ( Vr) ( Max):650 V
Reverse Recovery Time (trr):0 ns
Operating Temperature - Junction:-55°C ~ 175°C (TJ)
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
P3D06010T2 provided by PN Junction Semiconductor
PN Junction Semiconductor was established in September 2018 as a leading brand in third-generation power semiconductor devices in China. The company's main products are automotive-grade silicon carbide MOSFETs, silicon carbide SBDs, and gallium nitride power devices. The company has the most comprehensive catalog of silicon carbide power devices in China, with silicon carbide MOSFETs and SBDs covering various voltage levels and current-carrying capacities, all of which have passed AEC-Q101 testing and certification, and can meet various application scenarios of customers.
Dr. Huang Xing, the founder of PN Junction Semiconductor, has been deeply involved in the design and development of silicon carbide and gallium nitride power devices since 2009, and has studied under Professor B. Jayant Baliga, the inventor of IGBT, and Professor Alex Huang, the inventor of thyristor. Currently, PN Junction Semiconductor has released more than 100 different models of silicon carbide diodes, silicon carbide MOSFETs, silicon carbide power modules, and GaN HEMT products on the 650V, 1200V, and 1700V voltage platforms. Mass-produced products have been widely used in electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications, and other fields, providing continuous and stable supply to Tier 1 manufacturers.
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Excellent product quality and fast shipping service. Will definitely purchase again!
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Accurate product description and arrived earlier than expected.
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