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PN Junction Semiconductor P3D06008E2

DIODE SCHOTTKY 600V 8A TO252-2
part number has RoHS
Manufacturer # :P3D06008E2
Dasenic # :P3D06008E2-DS
Customer # :
Description : DIODE SCHOTTKY 600V 8A TO252-2
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 6.6600$ 6.66
11+$ 5.9800$ 65.78
101+$ 6.6600$ 672.66
501+$ 4.3200$ 2164.32
1001+$ 3.7800$ 3783.78
In Stock: 1970
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 6.66
Total :$ 6.66
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P3D06008E2 information

  • PN Junction Semiconductor P3D06008E2 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
  • Product Status:Active
  • Mounting Type:-
  • Package / Case:TO-252-2
  • Supplier Device Package:TO-252-2
  • Speed:No Recovery Time > 500mA (Io)
  • Diode Type:Silicon Carbide Schottky
  • Current - Average Rectified ( Io):22A (DC)
  • Voltage - Forward ( Vf) ( Max) @ If:-
  • Current - Reverse Leakage @ Vr:36 µA @ 650 V
  • Capacitance @ Vr, F:-
  • Voltage - D C Reverse ( Vr) ( Max):650 V
  • Reverse Recovery Time (trr):0 ns
  • Operating Temperature - Junction:-55°C ~ 175°C (TJ)
  • EU RoHS Status:ROHS3 Compliant
  • REACH Status:REACH Affected
  • US ECCN:EAR99
  • HTS US:8541.10.0080
  • China RoHS Status:Green Symbol: Green and environmentally friendly product
P3D06008E2 provided by PN Junction Semiconductor
PN Junction Semiconductor was established in September 2018 as a leading brand in third-generation power semiconductor devices in China. The company's main products are automotive-grade silicon carbide MOSFETs, silicon carbide SBDs, and gallium nitride power devices. The company has the most comprehensive catalog of silicon carbide power devices in China, with silicon carbide MOSFETs and SBDs covering various voltage levels and current-carrying capacities, all of which have passed AEC-Q101 testing and certification, and can meet various application scenarios of customers. Dr. Huang Xing, the founder of PN Junction Semiconductor, has been deeply involved in the design and development of silicon carbide and gallium nitride power devices since 2009, and has studied under Professor B. Jayant Baliga, the inventor of IGBT, and Professor Alex Huang, the inventor of thyristor. Currently, PN Junction Semiconductor has released more than 100 different models of silicon carbide diodes, silicon carbide MOSFETs, silicon carbide power modules, and GaN HEMT products on the 650V, 1200V, and 1700V voltage platforms. Mass-produced products have been widely used in electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications, and other fields, providing continuous and stable supply to Tier 1 manufacturers.
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