TT Electronics 2N4854UTX technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays
Product Status:Obsolete
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-CLCC
Power - Max:600mW
Supplier Device Package:6-CLCC
Transistor Type:NPN, PNP
Current - Collector ( Ic) ( Max):600mA
Voltage - Collector Emitter Breakdown ( Max):40V
Vce Saturation ( Max) @ Ib, Ic:400mV @ 15mA, 150mA
Current - Collector Cutoff ( Max):10nA (ICBO)
D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 150mA, 10V
Frequency - Transition:-
EU RoHS Status:RoHS non-compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0095
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
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2N4854UTX Datasheet
