Onsemi SSN1N45BTA technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-92-3
Power Dissipation ( Max):900mW (Ta)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):450 V
Current - Continuous Drain ( Id) @ 25° C:500mA (Tc)
Rds On ( Max) @ Id, Vgs:4.25Ohm @ 250mA, 10V
Vgs(th) ( Max) @ Id:3.7V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:8.5 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:240 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±50V
EU RoHS Status:ROHS3 Compliant
MSL Rating:Vendor omitted MSL Rating information
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0095
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
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SSN1N45BTA Datasheet
