Name: NTHS5441T1G
Brand: Onsemi
SKU: DS-6136702
Price: 0.5432 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Onsemi NTHS5441T1G

MOSFET P-CH 20V 3.9A CHIPFET

Manufacturer # :NTHS5441T1G

Manufacturer :Onsemi

Dasenic # :NTHS5441T1G-DS

Datasheet :

NTHS5441T1G Datasheet

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Description : MOSFET P-CH 20V 3.9A CHIPFET

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Quantity	Unit Price	Total
85+	$ 0.5432	$ 46.17
205+	$ 0.4458	$ 91.39
315+	$ 0.4318	$ 136.02
435+	$ 0.4180	$ 181.83
560+	$ 0.4040	$ 226.24

In Stock: 24444

MOQ :1 PCS

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NTHS5441T1G information

Onsemi NTHS5441T1G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Technology:MOSFET (Metal Oxide)
Supplier Device Package:ChipFET™
Power Dissipation ( Max):1.3W (Ta)
F E T Type:P-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):20 V
Current - Continuous Drain ( Id) @ 25° C:3.9A (Ta)
Rds On ( Max) @ Id, Vgs:46mOhm @ 3.9A, 4.5V
Vgs(th) ( Max) @ Id:1.2V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:22 nC @ 4.5 V
Input Capacitance ( Ciss) ( Max) @ Vds:710 pF @ 5 V
Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
Vgs ( Max):±12V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period

Download datasheets and manufacturer documentation for Onsemi NTHS5441T1G
Datasheet:
NTHS5441T1G,

Onsemi NTHS5441T1G Environmental and export classification status description
The Onsemi NTHS5441T1G is a high-speed switching diode designed for various applications in electronic circuits. It belongs to the Discrete Semiconductor Devices category and is known for its fast switching speeds and low power losses. Functions: 1. Fast Switching: The NTHS5441T1G can rapidly switch between on and off states, making it suitable for high-speed applications. 2. Reverse Voltage Protection: It can prevent damage to circuits by providing reverse voltage protection. 3. Signal Clipping: The diode can clip or limit the amplitude of input signals. Applications: 1. Rectification: Used in power supplies to convert AC voltage to DC. 2. Clipping Circuits: Limits the amplitude of signals in audio and video circuits. 3. High-Speed Switching: Suitable for applications requiring fast switching speeds. 4. Reverse Polarity Protection: Safeguards circuits against reverse voltage and current. Alternative Components: 1. 1N4148: A general-purpose signal diode with similar characteristics. 2. 1N5819: Schottky diode often used in rectifier applications. 3. UF4007: High-speed rectifier diode for general-purpose use. Embedded Modules: The NTHS5441T1G can be integrated into various modules such as: 1. Rectifier Modules: Used for converting AC to DC. 2. Signal Clipping Modules: Protects sensitive components from excessive voltages. 3. Switching Modules: Enables high-speed switching in circuits. Related Q&A: 1. What is the maximum forward voltage of the NTHS5441T1G diode? 2. Can the NTHS5441T1G be used for high-frequency applications? 3. How does the NTHS5441T1G compare to similar Schottky diodes in terms of speed and efficiency? 4. What protection features does the NTHS5441T1G offer for reverse voltage scenarios? 5. Are there specific layout guidelines for optimal performance when using the NTHS5441T1G in a circuit?

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NTHS5441T1G provided by Onsemi

Founded in 1999,ON Semiconductor (Nasdaq: ON) focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. Onsemi offers a diverse portfolio of semiconductor products, including Discrete & Power Modules,Power Management, Signal Conditioning & Control, Sensors, Motor Control, Custom & ASSP, Interfaces, Wireless Connectivity, Timing, Logic & Memory. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world. Headquartered in Arizona, USA, the company has a robust infrastructure that includes an extensive network of 19 manufacturing sites, 43 design centers, and 8 solution engineering centers.