Name: NTHD3102CT1G
Brand: Onsemi
SKU: DS-6117565
Price: 0.5132 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Onsemi NTHD3102CT1G

MOSFET N/P-CH 20V 4A/3.1A 1206A

Manufacturer # :NTHD3102CT1G

Manufacturer :Onsemi

Dasenic # :NTHD3102CT1G-DS

Datasheet :

NTHD3102CT1G Datasheet

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Description : MOSFET N/P-CH 20V 4A/3.1A 1206A

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590+	$ 0.3816	$ 225.14

In Stock: 48708

MOQ :1 PCS

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NTHD3102CT1G information

Onsemi NTHD3102CT1G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Power - Max:1.1W
Supplier Device Package:ChipFET™
F E T Type:N and P-Channel
F E T Feature:Logic Level Gate
Drain to Source Voltage ( Vdss):20V
Current - Continuous Drain ( Id) @ 25° C:4A, 3.1A
Rds On ( Max) @ Id, Vgs:45mOhm @ 4.4A, 4.5V
Vgs(th) ( Max) @ Id:1.2V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:7.9nC @ 4.5V
Input Capacitance ( Ciss) ( Max) @ Vds:510pF @ 10V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Onsemi NTHD3102CT1G
Datasheet:
NTHD3102CT1G,

Onsemi NTHD3102CT1G Environmental and export classification status description
The Onsemi NTHD3102CT1G is a member of the Discrete Semiconductor Devices category, specifically a P-Channel Power MOSFET. It features a compact and efficient design suitable for various high-speed switching applications. Functions: - P-Channel MOSFET with low on-resistance - Designed for high-speed switching applications - Compact and efficient design Applications: - Power management systems - DC-DC converters - Battery management systems - Motor control applications - LED lighting Alternative Components: - Infineon IPP041N04N - Diodes DMN6090SSD - Vishay SI7469DP Embedded Modules: The Onsemi NTHD3102CT1G can be integrated into various electronic systems or modules such as power management modules, motor control modules, and LED driver modules for improved performance and efficiency. Related Q&A: 1. Q: What is the typical maximum drain-source voltage for the Onsemi NTHD3102CT1G? A: The typical maximum drain-source voltage for the NTHD3102CT1G is around 30V. 2. Q: What is the on-resistance of the NTHD3102CT1G at typical operating conditions? A: The on-resistance of the NTHD3102CT1G is typically low, around a few milliohms, ensuring efficient power handling. 3. Q: Can the NTHD3102CT1G be used in automotive applications? A: Yes, the NTHD3102CT1G is suitable for automotive applications, such as in power management systems and motor control circuits. 4. Q: What are the recommended operating temperature ranges for the NTHD3102CT1G? A: The NTHD3102CT1G is typically rated for operation within the temperature range of -55°C to 150°C. 5. Q: How does the NTHD3102CT1G compare to other similar P-Channel MOSFETs in terms of performance and efficiency? A: The NTHD3102CT1G offers competitive performance and efficiency compared to other P-Channel MOSFETs, making it a suitable choice for various high-speed switching applications.

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NTHD3102CT1G provided by Onsemi

Founded in 1999,ON Semiconductor (Nasdaq: ON) focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. Onsemi offers a diverse portfolio of semiconductor products, including Discrete & Power Modules,Power Management, Signal Conditioning & Control, Sensors, Motor Control, Custom & ASSP, Interfaces, Wireless Connectivity, Timing, Logic & Memory. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world. Headquartered in Arizona, USA, the company has a robust infrastructure that includes an extensive network of 19 manufacturing sites, 43 design centers, and 8 solution engineering centers.