Onsemi NTB30N06LG technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK
Power Dissipation ( Max):88.2W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):60 V
Current - Continuous Drain ( Id) @ 25° C:30A (Ta)
Rds On ( Max) @ Id, Vgs:46mOhm @ 15A, 5V
Vgs(th) ( Max) @ Id:2V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:32 nC @ 5 V
Input Capacitance ( Ciss) ( Max) @ Vds:1150 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On):5V
Vgs ( Max):±15V
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
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NTB30N06LG Datasheet
