Onsemi NSBA124EDXV6T5G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Product Status:Obsolete
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Power - Max:500mW
Supplier Device Package:SOT-563
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector ( Ic) ( Max):100mA
Voltage - Collector Emitter Breakdown ( Max):50V
Vce Saturation ( Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff ( Max):500nA
D C Current Gain (h F E) ( Min) @ Ic, Vce:60 @ 5mA, 10V
Frequency - Transition:-
Resistor - Base ( R1):22kOhms
Resistor - Emitter Base ( R2):22kOhms
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
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- Please inform us within 365 days of receiving the product.
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NSBA124EDXV6T5G Datasheet
