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Onsemi NJW0281G
TO-3PB Bipolar Transistors - BJT
Manufacturer # :NJW0281G
Manufacturer :Onsemi
Dasenic # :241A00-DS
Datasheet :
NJW0281G Datasheet
NJW0281G DatasheetSample :
Customer # :
Description : TO-3PB Bipolar Transistors - BJT TO-3PB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.565000 | $ 2.57 |
| 10+ | $ 2.131200 | $ 21.31 |
| 100+ | $ 1.696500 | $ 169.65 |
| 500+ | $ 1.435500 | $ 717.75 |
| 1000+ | $ 1.218000 | $ 1218 |
In Stock: 21564
MOQ :1 PCS
Packaging :TO-3PB
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.565
Total :$ 2.56
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-3P-3, SC-65-3
- Power - Max:150 W
- Supplier Device Package:TO-3P-3L
- Transistor Type:NPN
- Current - Collector ( Ic) ( Max):15 A
- Voltage - Collector Emitter Breakdown ( Max):250 V
- Vce Saturation ( Max) @ Ib, Ic:1V @ 500mA, 5A
- Current - Collector Cutoff ( Max):10µA (ICBO)
- D C Current Gain (h F E) ( Min) @ Ic, Vce:75 @ 3A, 5V
- Frequency - Transition:30MHz
- Base Product Number:NJW0281
- Packaging:Tube
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