Name: MMVL3700T1G
Brand: Onsemi
SKU: DS-5751417
Price: 0.2936 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Onsemi MMVL3700T1G

RF DIODE PIN 200V 200MW SOD323

Manufacturer # :MMVL3700T1G

Manufacturer :Onsemi

Dasenic # :MMVL3700T1G-DS

Datasheet :

MMVL3700T1G Datasheet

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Description : RF DIODE PIN 200V 200MW SOD323

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Quantity	Unit Price	Total
10+	$ 0.2936	$ 2.94
9000+	$ 0.1631	$ 1467.9
15000+	$ 0.1487	$ 2230.5
30000+	$ 0.1631	$ 4893
75000+	$ 0.1247	$ 9352.5

In Stock: 884

MOQ :1 PCS

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Unit Price :$ 0.2936

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MMVL3700T1G information

Onsemi MMVL3700T1G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Diodes - RF
Product Status:Obsolete
Operating Temperature:150°C (TJ)
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Current - Max:20 mA
Diode Type:PIN - Single
Voltage - Peak Reverse ( Max):200V
Capacitance @ Vr, F:1pF @ 20V, 1MHz
Resistance @ If, F:1Ohm @ 10mA, 100MHz
Power Dissipation ( Max):200 mW
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.10.0070
EU RoHS Status:RoHS Compliant
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period

Download datasheets and manufacturer documentation for Onsemi MMVL3700T1G
Datasheet:
MMVL3700T1G,

Onsemi MMVL3700T1G Environmental and export classification status description
The Onsemi MMVL3700T1G is a part of the Discrete Semiconductor Devices category, specifically an NPN Bipolar Transistor. It is designed for general-purpose amplifier and switching applications. Functions: 1. Amplification of weak signals. 2. Control the flow of current in a circuit. 3. Switching signal on/off based on the input. Applications: 1. Amplifiers and signal processing circuits. 2. Motor control and power management systems. 3. Inverters and converters in power electronics. 4. Lighting control and switching applications. 5. Audio amplification. Alternative Components: 1. The Onsemi MMBT3904LT1G NPN Bipolar Transistor. 2. Fairchild 2N3904 NPN Bipolar Transistor. 3. Diodes Inc. PN2222 NPN Bipolar Transistor. Embedded Modules: 1. SOT-23 Package 2. SOT-89 Package 3. SOT-223 Package Q&A: 1. What are the key specifications of the Onsemi MMVL3700T1G? - Collector current (IC): 600mA - Collector-emitter voltage (VCEO): 40V - Transition frequency (ft): 300MHz - Package Type: SOT-23 2. Can the Onsemi MMVL3700T1G be used in switching applications? Yes, this transistor can be used for switching applications due to its fast response and high current capability. 3. What are the advantages of using the Onsemi MMVL3700T1G in amplifier circuits? This transistor offers high gain and low noise characteristics, making it suitable for amplification of weak signals in various circuits. 4. How does the Onsemi MMVL3700T1G compare to other NPN Bipolar Transistors on the market? The Onsemi MMVL3700T1G offers a good balance of performance, cost, and availability compared to other similar transistors. 5. Can the Onsemi MMVL3700T1G withstand high temperatures in industrial applications? This transistor has a high operating temperature range and can withstand industrial environments with proper heat sinking and design considerations.

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MMVL3700T1G provided by Onsemi

Founded in 1999,ON Semiconductor (Nasdaq: ON) focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. Onsemi offers a diverse portfolio of semiconductor products, including Discrete & Power Modules,Power Management, Signal Conditioning & Control, Sensors, Motor Control, Custom & ASSP, Interfaces, Wireless Connectivity, Timing, Logic & Memory. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world. Headquartered in Arizona, USA, the company has a robust infrastructure that includes an extensive network of 19 manufacturing sites, 43 design centers, and 8 solution engineering centers.