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MMBT5550LT3G
140V 225mW 60@10mA,5V 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT
DownloadIn Stock: 31455
MOQ : 1 PCS
Packaging :SOT-23(TO-236)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.0332
Total : $ 0.03
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Five-star service - Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Power - Max:225 mW
- Supplier Device Package:SOT-23-3 (TO-236)
- Transistor Type:NPN
- Current - Collector ( Ic) ( Max):600 mA
- Voltage - Collector Emitter Breakdown ( Max):140 V
- Vce Saturation ( Max) @ Ib, Ic:250mV @ 5mA, 50mA
- Current - Collector Cutoff ( Max):100nA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:60 @ 10mA, 5V
- Base Product Number:MMBT5550
- Packaging:Tape & Reel (TR)
- Packaging:Cut Tape (CT)
- Packaging:Dasenic-Reel®
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