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Onsemi MMBT3906LT1G
40V 300mW 100@10mA,1V 200mA PNP SOT-23(TO-236) Bipolar Transistors - BJT
Manufacturer # :MMBT3906LT1G
Manufacturer :Onsemi
Dasenic # :F552D4-DS
Datasheet :
MMBT3906LT1G Datasheet
MMBT3906LT1G DatasheetSample :
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Description : 40V 300mW 100@10mA,1V 200mA PNP SOT-23(TO-236) Bipolar Transistors - BJT SOT-23(TO-236)
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| Quantity | Unit Price | Total |
| 10+ | $ 0.015800 | $ 0.16 |
| 3000+ | $ 0.008800 | $ 26.4 |
| 6000+ | $ 0.008500 | $ 51 |
| 12000+ | $ 0.008300 | $ 99.6 |
| 18000+ | $ 0.008100 | $ 145.8 |
In Stock: 48979
MOQ :1 PCS
Packaging :SOT-23(TO-236)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.0158
Total :$ 0.02
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Power - Max:300 mW
- Supplier Device Package:SOT-23-3 (TO-236)
- Transistor Type:PNP
- Current - Collector ( Ic) ( Max):200 mA
- Voltage - Collector Emitter Breakdown ( Max):40 V
- Vce Saturation ( Max) @ Ib, Ic:400mV @ 5mA, 50mA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 10mA, 1V
- Frequency - Transition:250MHz
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