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Onsemi MJD50T4G

400V 1.56W 30@300mA,10V 1A NPN TO-252 Bipolar Transistors - BJT
part number has RoHS
Manufacturer # :MJD50T4G
Manufacturer :Onsemi
Dasenic # :31C0D5-DS
Customer # :
Description : 400V 1.56W 30@300mA,10V 1A NPN TO-252 Bipolar Transistors - BJT TO-252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
7+$ 0.057100$ 0.4
10+$ 0.055900$ 0.56
100+$ 0.054200$ 5.42
500+$ 0.052500$ 26.25
1000+$ 0.051400$ 51.4
In Stock: 19442
MOQ :1 PCS
Packaging :TO-252
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0571
Total :$ 0.06
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MJD50T4G information

Product Details
The OnsemiMJD50T4G is a bipolar PNP power transistor designed for general-purpose amplifier and switching applications. It features a maximum collector-emitter voltage of 120V, a continuous collector current of 8A, and a power dissipation of 50W. This transistor comes in a TO-252 package, also known as DPAK, which provides efficient heat dissipation. Functions: - Power Amplification: The OnsemiMJD50T4G can be used to amplify power signals in various electronic circuits. - Switching: It can also function as a switch to control higher power loads in applications such as motor control, lighting systems, and power supplies. Applications: - Audio Amplifiers: Utilized in audio amplifier circuits for power amplification. - Power Supplies: Used in the power supply sections of electronic devices. - Motor Control: Employed in motor driver circuits for controlling motors efficiently. Alternative Parts: - NPN Complementary: MJD45T4G - Higher Voltage Rating: MJD50T4G Embedded Modules: - The OnsemiMJD50T4G can be integrated into various electronic modules such as motor control boards, power supply units, and audio amplifier modules for enhanced functionality and performance. Related Q&A: 1. Q: What is the maximum collector-emitter voltage of the OnsemiMJD50T4G? - A: The OnsemiMJD50T4G has a maximum collector-emitter voltage of 120V. 2. Q: What type of package does the OnsemiMJD50T4G come in? - A: The OnsemiMJD50T4G comes in a TO-252 (DPAK) package. 3. Q: In what applications can the OnsemiMJD50T4G be used? - A: The OnsemiMJD50T4G is commonly used in audio amplifiers, power supplies, and motor control circuits. 4. Q: Are there alternative parts to the OnsemiMJD50T4G with similar specifications? - A: Yes, the MJD45T4G is the NPN complementary part, and the MJD50T4G offers a higher voltage rating as alternatives to the OnsemiMJD50T4G. 5. Q: Can the OnsemiMJD50T4G be integrated into embedded modules? - A: Yes, the OnsemiMJD50T4G can be integrated into various electronic modules such as motor control boards and power supply units for enhanced functionality.
  • Onsemi MJD50T4G technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
  • Product Status:Active
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Power - Max:1.56 W
  • Supplier Device Package:DPAK
  • Transistor Type:NPN
  • Current - Collector ( Ic) ( Max):1 A
  • Voltage - Collector Emitter Breakdown ( Max):400 V
  • Vce Saturation ( Max) @ Ib, Ic:1V @ 200mA, 1A
  • Current - Collector Cutoff ( Max):200µA
  • D C Current Gain (h F E) ( Min) @ Ic, Vce:30 @ 300mA, 10V
  • Frequency - Transition:10MHz
  • Base Product Number:MJD50
  • Packaging:Dasenic-Reel®
  • Packaging:Cut Tape (CT)
  • Packaging:Tape & Reel (TR)
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