Onsemi MBT3946DW1T2G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Power - Max:150mW
Supplier Device Package:SC-88/SC70-6/SOT-363
Transistor Type:NPN, PNP
Current - Collector ( Ic) ( Max):200mA
Voltage - Collector Emitter Breakdown ( Max):40V
Vce Saturation ( Max) @ Ib, Ic:300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
Current - Collector Cutoff ( Max):-
D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 10mA, 1V
Frequency - Transition:300MHz, 250MHz
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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MBT3946DW1T2G Datasheet
